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ZXMN15A27K
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
150
?
?
?
?
?
?
500
± 100
V
nA
nA
I D = 250 μ A, V GS = 0V
V DS = 150V, V GS = 0V
V GS = ± 25V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 & 9)
Diode Forward Voltage (Note 8)
Reverse recovery time (Note 9)
Reverse recovery charge (Note 9)
V GS(th)
R DS (ON)
g fs
V SD
t rr
Q rr
2
?
?
?
?
?
2.7
0.500
2.8
0.880
153
1.1
4
0.650
?
0.950
?
?
V
?
S
V
ns
μ C
I D = 250 μ A, V DS = V GS
V GS = 10V, I D = 2.15A
V DS = 40V, I D = 2.15A
I S = 4.3A, V GS = 0V
I S = 5.4A, V GS = 0V,
di/dt = 100A/ μ s
DYNAMIC CHARACTERISTICS ( Note 9 )
Input Capacitance
C iss
?
169
?
pF
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time (Note 10)
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)
C oss
C rss
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
?
?
?
?
?
?
?
?
?
64.5
23.3
6.6
1.0
3.4
3.3
12.7
17.1
13.3
?
?
?
?
?
?
?
?
?
pF
pF
nC
nC
nC
ns
ns
ns
ns
V DS = 25V, V GS = 0V
f = 1MHz
V DS = 120V, V GS = 10V
I D = 5.4A
V DD = 75V, V GS = 10V
I D = 5.4A, R G ? 25 Ω
Notes:
8. Measured under pulsed conditions. Pulse width ≤ 300 μ s; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
ZXMN15A27K
Document Number DS31978 Rev. 2 - 2
4 of 8
www.diodes.com
October 2009
? Diodes Incorporated
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